Device design for subthreshold slope and threshold voltage control in sub-100-nm fully depleted SOI MOSFETs

This paper presents the comparative study on the device design method of the subthreshold slope and the threshold voltage control in fully-depleted silicon-on-insulator MOSFETs under sub-100-nm regime. As for the threshold voltage adjustment method, the combination of the back gate bias and the gate work function controls is found to provide the superior short channel effects, the suppression of the threshold voltage fluctuation due to the SOI thickness variation, and the current drive improvement. As for the subthreshold slope, the importance and the necessity of buried oxide engineering are pointed out from the viewpoint of both the substrate capacitance and short-channel effects. It is shown, consequently, that the optimization of the thickness and the permittivity of buried oxides have a significant impact on the control of the subthreshold slope under sub-100-nm regime. When the gate length is less than 100 nm, the subthreshold slope has a minimum value at the buried oxide thickness of around 40 nm, irrespective of the SOI thickness. It is also shown that the reduction in the permittivity of the buried oxides under a constant buried oxide capacitance improves the subthreshold slope.