Integration and reliability of Cu-SiOC interconnect for ArF/90-nm node CMOS technology

Author

Noguchi, Junji ; Oshima, Takayuki ; Konishi, Nobuhiro ; Ishikawa, Kensuke ; Sato, Kiyohiko ; Uno, Syouichi ; Hotta, Syoji ; Saito, Tatsuyuki ; Aoki, Hideo

Author_Institution

Micro Device Div., Hitachi Ltd., Tokyo, Japan

Volume

51

Issue

12

fYear

2004

Firstpage

2168

Lastpage

2174

Abstract

Cu-SiOC interconnects for ArF/90-nm node technology were investigated. This paper describes the integration and reliability issues. The methods to improve chemical mechanical polishing delamination, SiOC damage and electrical shorts through the bottom interface of Cu interconnects were discussed. Reliability characteristics, such as stress-migration, electro-migration, and time-dependent dielectric breakdown (TDDB) were studied. Cu diffusion with via resistance increase by high-temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integration process was mature and sufficiently reliable for normal operating conditions.

Keywords

CMOS integrated circuits; argon compounds; copper; electric breakdown; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; interface phenomena; permittivity; silicon compounds; 90 nm; ArF; CMOS technology; Cu diffusion; Cu-SiOC; Cu-SiOC interconnect; SiOC damage; chemical mechanical polishing delamination; electrical shorts; electromigration; high-temperature stress; integrated circuit interconnections; interface phenomena; metallization; permittivity; stress-migration; time-dependent dielectric breakdown; via resistance; CMOS technology; Chemical technology; Delamination; Dielectric breakdown; Dielectric constant; Integrated circuit interconnections; Integrated circuit reliability; Optical films; Optical interconnections; Random access memory; 65; Copper; dielectric breakdown; electromigration; integrated circuit interconnections; interface phenomena; metallization; permittivity; reliability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.839755

Filename

1362983