Title :
Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As
Author :
Sadwick, Larry P. ; Kim, C.W. ; Tan, Kin L. ; Streit, Dwight C.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
The authors report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al/sub 0.48/In/sub 0.52/As epitaxial material grown by molecular beam epitaxy on semi-insulating InP substrates. The Schottky contact metals studied were Au, Al, Pt, and tri-layer Ti/Pt/Au. The Schottky barrier heights varied from 0.560 eV for Al on n-type AlInAs to 0.905 eV for Al on p-type AlInAs, with intermediate values for the other metals studied. The sum of n- and p-type Schottky barrier heights for each metal contact ranged from 1.440 to 1.465 eV, in good agreement with the accepted Al/sub 0.48/In/sub 0.52/As bandgap value of 1.45 eV.<>
Keywords :
III-V semiconductors; Schottky effect; aluminium; aluminium compounds; gold; indium compounds; platinum; semiconductor epitaxial layers; semiconductor-metal boundaries; 0.56 to 1.465 eV; Al-AlInAs; Al/sub 0.48/In/sub 0.52/As; Al/sub 0.48/In/sub 0.52/As-InP; Au-AlInAs; Pt-AlInAs; Schottky barrier heights; Schottky barriers; Schottky contact metals; TiPtAu-AlInAs; bandgap value; electrical measurements; metal contacts; molecular beam epitaxy; n-type AlInAs; p-type AlInAs; semi-insulating InP substrates; Contacts; Electric variables measurement; Gold; Indium phosphide; Inorganic materials; Molecular beam epitaxial growth; Photonic band gap; Schottky barriers; Substrates; Voltage measurement;
Journal_Title :
Electron Device Letters, IEEE
