Title :
Electrical properties of Ta2O5 gate dielectric on strained-Si
Author :
Maiti, C.K. ; Chatterjee, S. ; Dalapati, G.K. ; Samanta, S.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fDate :
3/20/2003 12:00:00 AM
Abstract :
High dielectric constant (high-k) thin Ta2O5 films have been deposited on tensilely strained silicon (strained-Si) layers using a microwave plasma enhanced chemical vapour deposition technique at a low temperature. The deposited Ta2O5 films show good electrical properties as gate dielectrics and are suitable for microelectronic applications. The feasibility of integration of strained-Si and high-k dielectrics has been demonstrated.
Keywords :
CMOS integrated circuits; MIS capacitors; dielectric thin films; elemental semiconductors; permittivity; plasma CVD; silicon; tantalum compounds; CMOS; MIS capacitors; Ta2O5-Si; dielectric constant; electrical properties; gate dielectric; high-k dielectrics; microelectronic applications; microwave plasma enhanced chemical vapour deposition technique; tensilely strained layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030380
