Improved hot-electron reliability in strained-Si nMOS

Author

Onsongo, David ; Kelly, David Q. ; Dey, Sagnik ; Wise, Rick L. ; Cleavelin, C. Rinn ; Banerjee, Sanjay K.

Author_Institution

IBM Semicond. R&D Center, East Fishkill, NY, USA

Volume

51

Issue

12

fYear

2004

Firstpage

2193

Lastpage

2199

Abstract

Strained-Si/relaxed-Si_1-xGe_x structures provide a viable means of improving CMOS performance. For nMOS devices, the tensile strain in pseudomorphic Si on relaxed-Si_1-xGe_x splits the six-fold degeneracy of the conduction band minimum, rendering increased electron mobility due to a lower in-plane effective mass and reduced intervalley scattering. In this paper, in addition to confirming enhanced performance for biaxial-strained-Si nMOS, we present hot-electron degradation characteristics for the first time, showing improvement over bulk Si.

Keywords

Ge-Si alloys; MOSFET; electron mobility; hot carriers; semiconductor device reliability; MOSFET; SiGe; biaxial-strained-Si nMOS; conduction band; electron mobility; hot carriers; hot-electron degradation; hot-electron reliability; intervalley scattering; semiconductor device reliability; strained-Si nMOS devices; tensile strain; Degradation; Effective mass; Electron mobility; Human computer interaction; MOS devices; MOSFETs; Photonic band gap; Scattering; Strain control; Tensile strain; 65; Hot carriers; MOSFETs; semiconductor device reliability; strained-Si;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.839871

Filename

1362987