Title :
High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode
Author :
Takahashi, Hiroyuki ; Shimamura, Tomonori ; Sugiyama, Takashi ; Kubota, Munechika ; Nakamura, Koji
Author_Institution :
Corp. R&D Center, Network Technol. Labs., Oki Electr. Ind. Co. Ltd., Tokyo
fDate :
5/15/2009 12:00:00 AM
Abstract :
A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100 - Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 degC.
Keywords :
electro-optical modulation; electroabsorption; integrated optics; laser beam applications; local area networks; optical fibre networks; optical transmitters; semiconductor lasers; Ethernet application; bit rate 100 Gbit/s; bit rate 25 Gbit/s; high-power electroabsorption modulator; integrated laser diode; ridge-type laser diode; single-mode fiber; temperature 35 degC; 100-Gb/s Ethernet; Electroabsorption (EA) modulator integrated laser diode (LD); high-power electroabsorption modulator integrated laser diode (EML); ridge-type laser diode (LD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2015581
