• DocumentCode
    1174254
  • Title

    High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode

  • Author

    Takahashi, Hiroyuki ; Shimamura, Tomonori ; Sugiyama, Takashi ; Kubota, Munechika ; Nakamura, Koji

  • Author_Institution
    Corp. R&D Center, Network Technol. Labs., Oki Electr. Ind. Co. Ltd., Tokyo
  • Volume
    21
  • Issue
    10
  • fYear
    2009
  • fDate
    5/15/2009 12:00:00 AM
  • Firstpage
    633
  • Lastpage
    635
  • Abstract
    A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100 - Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 degC.
  • Keywords
    electro-optical modulation; electroabsorption; integrated optics; laser beam applications; local area networks; optical fibre networks; optical transmitters; semiconductor lasers; Ethernet application; bit rate 100 Gbit/s; bit rate 25 Gbit/s; high-power electroabsorption modulator; integrated laser diode; ridge-type laser diode; single-mode fiber; temperature 35 degC; 100-Gb/s Ethernet; Electroabsorption (EA) modulator integrated laser diode (LD); high-power electroabsorption modulator integrated laser diode (EML); ridge-type laser diode (LD);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2015581
  • Filename
    4787133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1174254