Title :
Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs/air mirror
Author :
Mo, Q. ; Chen, H. ; Huang, Z. ; Shchekin, O.B. ; Cao, C. ; Lipson, S. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
3/20/2003 12:00:00 AM
Abstract :
An electrically pumped GaAs-based vertical cavity surface emitting laser is demonstrated that uses an upper p-type GaAs/air-gap distributed Bragg reflector. The air gaps are realised by selective removal of AlGaAs sacrificial layers. Low threshold at room temperature is obtained using this fabrication scheme.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; optical fabrication; semiconductor lasers; surface emitting lasers; AlGaAs sacrificial layers; AlGaAs-GaAs; CW operation; GaAs-based VCSELs; continuous-wave operation; distributed Bragg reflector; electrically pumped laser; fabrication scheme; p-type GaAs/air mirror; room-temperature operation; surface emitting laser; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030309
