Title :
Stress-induced oxide leakage
Author :
Rofan, Reza ; Hu, Chenming
Author_Institution :
Electron Res. Lab., California Univ., Berkeley, CA, USA
Abstract :
Voltage-stress-induced leakage in 5-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap assisted tunneling. Data supporting a model involving trap states are presented.<>
Keywords :
dielectric thin films; leakage currents; semiconductor-insulator boundaries; silicon compounds; tunnelling; 5 nm; Si-SiO/sub 2/ thin films; annealing tests; charge-pumping current; gate oxides; leakage current; model; oxide-trap assisted tunneling; restress tests; stress induced oxide leakage; thermal oxides; trap states; voltage stress induced leakage; voltage stress tests; Annealing; Breakdown voltage; Charge pumps; Current measurement; Electron traps; Frequency; Leakage current; MOSFETs; Thermal stresses; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
