DocumentCode :
1174510
Title :
A Monte Carlo Study of 
e-APD
Author :
Derelle, Sophie ; Bernhardt, Sylvie ; Haldar, Raktim ; Primot, Jérôme ; Deschamps, Joël ; Rothman, Johan
Author_Institution :
French Aerosp. Lab. (ONERA), Palaiseau
Volume :
56
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
569
Lastpage :
577
Abstract :
A simple Monte Carlo model is developed for understanding the multiplication process in HgCdTe infrared avalanche photodiodes and the impact of physical and technological parameters. A good agreement is achieved between simulations and experimental measurements of gain and excess noise factor. In both cases, an exponential gain and extremely low noise-F ~ 1 for multiplication gains up to 1000-were observed on 5.1-mum cutoff devices at 77 K, indicative of a single carrier impact ionization. A comparison study is presented to explain the effect of different combinations of scattering processes on the avalanche phenomenon in HgCdTe.
Keywords :
Monte Carlo methods; avalanche photodiodes; cadmium compounds; impact ionisation; mercury compounds; Hg0.7Cd0.3Te; Monte Carlo model; carrier impact ionization; excess noise factor; exponential gain; gain 1000 dB; infrared avalanche photodiodes; size 5.1 mum; temperature 77 K; Effective mass; Electrons; History; Impact ionization; Monte Carlo methods; Phonons; Predictive models; Scattering; Semiconductor device noise; Tellurium; Alloy scattering; HgCdTe; Monte Carlo (MC) simulation; dead space; electron-initiated avalanche photodiode (e-APD); impact ionization; infrared; low excess noise factor; multiplication gain; polar optical phonon (POP) scattering;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2012526
Filename :
4787156
Link To Document :
