Title :
A new method to determine the work-function difference and its application to calibrate the boron-segregation coefficient
Author :
Lin, Pole-Shang ; Chang, Chia-Haur
Author_Institution :
Electron. Res. & Service Organ., Hsin-chu, Taiwan
Abstract :
The authors present a technique to determine the work-function difference from a plot of the threshold voltage (V/sub T/) versus oxide thickness (T/sub ox/) curve. The extraction errors caused by the electrical characteristics of the oxide and the SiO/sub 2//Si interface can be minimized by the V/sub T/-T/sub ox/ technique. The boron segregation coefficient can be calibrated from the slope of the V/sub T/-T/sub ox/ curve. Comparisons between the experimental data and simulation results are made, and good agreement is obtained.<>
Keywords :
boron; insulated gate field effect transistors; semiconductor-insulator boundaries; B segregation coefficient calibration; Si-SiO/sub 2/ interface; electrical characteristics; experimental data; simulation results; threshold voltage/oxide thickness curve; work function difference determination; Boron; CMOS technology; Data mining; Design optimization; Doping; Electric variables; Extrapolation; FETs; MOSFET circuits; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
