Title :
AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high fT and fMAX
Author :
Bardwell, J.A. ; Liu, Y. ; Tang, H. ; Webb, J.B. ; Rolfe, S.J. ; Lapointe, J.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
3/20/2003 12:00:00 AM
Abstract :
AlGaN/GaN HFET layers were grown by ammonia-MBE on SiC substrates. Fabricated devices showed excellent characteristics: a maximum drain current density > 1.25 A/mm, maximum transconductance of 250 mS/mm, fT of 103 GHz and fMAX of 170 GHz were measured for devices with 0.13 μm gate length. These are the highest ever reported for material grown by ammonia-MBE.
Keywords :
III-V semiconductors; aluminium compounds; ammonia; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power field effect transistors; silicon compounds; wide band gap semiconductors; 0.13 micron; 103 GHz; 170 GHz; 250 mS/mm; AlGaN-GaN; AlGaN/GaN HFET devices; SiC; SiC substrates; ammonia-MBE growth; drain current density; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030354
