Author :
Singh, D.V. ; Koester, S.J. ; Chu, J.O. ; Jenkins, K.A. ; Mooney, P.M. ; Ouyang, Q.C. ; Ruiz, N. ; Ott, J.A. ; Ralston, D. ; Wetzel, M. ; Asbeck, P.M. ; Saenger, K.L. ; Patel, V.V. ; Grill, A.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The first demonstration of an integrated circuit using high mobility p-channel modulation doped field effect transistors (MODFETs) is reported. A static frequency divider was fabricated on Si0.7Ge0.3/Si0.2Ge0.8/Si0.7Ge0.3 strained heterostructures grown epitaxially on Si using ultra-high vacuum chemical vapour deposition; divide-by-two operation was achieved for clock frequencies of up to 2.9 GHz.
Keywords :
Ge-Si alloys; HEMT integrated circuits; field effect digital integrated circuits; frequency dividers; high electron mobility transistors; semiconductor materials; 0.15 micron; 2.9 GHz; HEMT; SCFL; cascaded latches; chemical vapour deposition; divide-by-two frequency divider; epitaxially grown heterostructures; field effect transistors; high mobility p-channel MODFETs; level-shifting source followers; modulation doped FET; output buffer; source-coupled FET logic; static frequency divider; strained heterostructures; ultra-high vacuum CVD;
