Extraction of BJT model parameters using optimization method

Author

Garwacki, Krzysztof

Author_Institution

Dept. of Electr. Eng., Warsaw Univ. of Technol., Poland

Volume

7

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

850

Lastpage

854

Abstract

A method for parameter extraction of a SPICE 2G.6 bipolar junction transistor (BJT) model is presented. The proposed approach consists of minimizing a nonlinear objective function to produce a least-squares fit of the model equations to a set of measured device characteristics. All parameters are extracted using a combination of the direct-search optimization method and the variable metric algorithm. This makes it possible to obtain satisfactory results even in the presence of redundant parameters and poor initial values. A special strategy of calculating an objective function during optimization that requires very little CPU time is proposed. An example of parameter extraction of the SPICE 2 G.6 BJT model shows poor model accuracy. Therefore a model modification that gives a very good fit to the measured data is proposed

Keywords

bipolar transistors; optimisation; semiconductor device models; BJT model parameters; SPICE 2G.6 bipolar junction transistor; device characteristics; direct-search optimization method; least-squares fit; model accuracy; nonlinear objective function; optimization; optimization method; parameter extraction; redundant parameters; variable metric algorithm; Capacitors; Central Processing Unit; Circuit analysis; Diodes; Integrated circuit measurements; Integrated circuit modeling; Nonlinear equations; Optimization methods; Parameter extraction; SPICE;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.3215

Filename

3215