Title :
Design method for fully integrated CMOS RF LNA
Author :
Egels, M. ; Gaubert, J. ; Pannier, P. ; Bourdel, S.
Author_Institution :
UMR CNRS Polytech. Marseille, Marseille, France
Abstract :
An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 Ω input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 μm RF CMOS process.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; network topology; radiofrequency amplifiers; radiofrequency integrated circuits; 0.28 micron; 10 mW; 2.45 GHz; 3 dB; 50 ohm; active device sizing method; inductor; integrated RF CMOS LNA design; low noise amplifier; topology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046396
