• DocumentCode
    1175007
  • Title

    Design method for fully integrated CMOS RF LNA

  • Author

    Egels, M. ; Gaubert, J. ; Pannier, P. ; Bourdel, S.

  • Author_Institution
    UMR CNRS Polytech. Marseille, Marseille, France
  • Volume
    40
  • Issue
    24
  • fYear
    2004
  • Firstpage
    1513
  • Lastpage
    1514
  • Abstract
    An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 Ω input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 μm RF CMOS process.
  • Keywords
    CMOS integrated circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; network topology; radiofrequency amplifiers; radiofrequency integrated circuits; 0.28 micron; 10 mW; 2.45 GHz; 3 dB; 50 ohm; active device sizing method; inductor; integrated RF CMOS LNA design; low noise amplifier; topology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046396
  • Filename
    1363645
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1175007