Title :
Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb
Author :
Jang, J.H. ; Cho, H.K. ; Bae, J.W. ; Pan, N. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana Champaign, IL, USA
Abstract :
Ohmic contacts based on Pd/Ir/Au metallisations have been formed on highly doped (5×1019 cm-3) p-type GaAsSb. Typical hole mobility in the MOCVD-grown p-GaAsSb was measured to be 50 cm2/Vs. Electrical characteristics of ohmic contacts were measured utilising the transfer length method. The ohmic contact exhibited specific contact resistivity less than 10-8 Ω-cm2 and transfer length less than 100 nm. X-ray photoelectron spectroscopy study was also utilised to investigate the interactions between the multilayer metallisations and the ternary GaAsSb compound semiconductor.
Keywords :
III-V semiconductors; MOCVD coatings; X-ray photoelectron spectra; electrical resistivity; gallium arsenide; gallium compounds; gold; hole mobility; iridium; metallisation; multilayers; ohmic contacts; palladium; semiconductor-metal boundaries; MOCVD growth; Pd-Ir-Au-GaAsSb; Pd/Ir/Au metallisations; X-ray photoelectron spectroscopy; electrical characteristics; hole mobility; multilayer metallisations; ohmic contacts; ternary GaAsSb compound semiconductor; transfer length method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046658
