Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb

Author

Jang, J.H. ; Cho, H.K. ; Bae, J.W. ; Pan, N. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana Champaign, IL, USA

Volume

40

Issue

24

fYear

2004

Firstpage

1550

Lastpage

1551

Abstract

Ohmic contacts based on Pd/Ir/Au metallisations have been formed on highly doped (5×10¹⁹ cm^-3) p-type GaAsSb. Typical hole mobility in the MOCVD-grown p-GaAsSb was measured to be 50 cm²/Vs. Electrical characteristics of ohmic contacts were measured utilising the transfer length method. The ohmic contact exhibited specific contact resistivity less than 10^-8 Ω-cm² and transfer length less than 100 nm. X-ray photoelectron spectroscopy study was also utilised to investigate the interactions between the multilayer metallisations and the ternary GaAsSb compound semiconductor.

Keywords

III-V semiconductors; MOCVD coatings; X-ray photoelectron spectra; electrical resistivity; gallium arsenide; gallium compounds; gold; hole mobility; iridium; metallisation; multilayers; ohmic contacts; palladium; semiconductor-metal boundaries; MOCVD growth; Pd-Ir-Au-GaAsSb; Pd/Ir/Au metallisations; X-ray photoelectron spectroscopy; electrical characteristics; hole mobility; multilayer metallisations; ohmic contacts; ternary GaAsSb compound semiconductor; transfer length method;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20046658

Filename

1363670