DocumentCode :
1175290
Title :
GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
Author :
Kim, M.E. ; Oki, A.K. ; Gorman, G.M. ; Umemoto, D.K. ; Camou, J.B.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Volume :
37
Issue :
9
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
1286
Lastpage :
1303
Abstract :
GaAs-AlGaAs n-p-n heterojunction bipolar transistor (GaAs HBT) technology and its application to analog and microwave functions for high-performance military and commercial systems are discussed. In many applications the GaAs HBT offers key advantages over the alternative advanced silicon bipolar and III-V compound field-effect-transistor (FET) approaches. TRW´s GaAs HBT device and IC fabrication process, basic HBT DC and RF performance, examples of applications, and technology qualification work are presented and serve as a basis for addressing general capability issues. A related 3-μm emitter-up, self-aligned HBT IC process provides excellent DC and RF performance, with simultaneous gain-bandwidth product, fT, and maximum frequency of oscillation, fmax, of approximately 20-40 GHz and DC current gain β≈50-100 at useful collector current densities ≈3-10 kA/cm2, early voltage ≈500-1000 V, and MSI-LSI integration levels. These capabilities facilitate versatile DC-20-GHz analog/microwave as well as 3-6 Gb/s digital applications, 2-3 G sample/s A/D conversion, and single-chip multifunctions with producibility
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; linear integrated circuits; 0 to 40 GHz; 3 micron; 3 to 6 Gbit/s; GaAs-AlGaAs; IC fabrication process; IC technology; III-V semiconductors; MMIC; RF performance; TRW; analogue functions; emitter-up process; heterojunction bipolar transistor; microwave applications; self-aligned HBT IC process; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Microwave FET integrated circuits; Microwave devices; Microwave technology; Radio frequency; Radiofrequency integrated circuits; Silicon;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.32211
Filename :
32211
Link To Document :
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