Title :
Reliability of Nanoelectromechanical Nonvolatile Memory (NEMory) Cells
Author :
Choi, Woo Young ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul
fDate :
3/1/2009 12:00:00 AM
Abstract :
The reliability of nanoelectromechanical nonvolatile memory cells is investigated. Improvements in beam design, material, and operating ambient condition are shown to be effective for enhancing program/erase endurance. The fabricated cell demonstrated program/erase endurance exceeding 200 dc-voltage sweep cycles and projected retention time more than ten years.
Keywords :
nanoelectromechanical devices; random-access storage; reliability; NEMory cells; nanoelectromechanical nonvolatile memory cells; program/erase endurance; reliability; voltage 200 V; Electronics industry; Fabrication; Fatigue; Flash memory; Humidity; Hysteresis; Nonvolatile memory; Structural beams; Ubiquitous computing; Voltage; Nanoelectromechanical nonvolatile memory (NEMory); reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2010879
