Title :
Thermally stable SiC MESFET with iridium oxide gate electrode
Author :
Han, S.Y. ; Lee, J.-L.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang Kyungbuk, South Korea
Abstract :
Thermally stable SiC MESFET using iridium-oxide (IrO2) gate contact has been demonstrated and compared with conventionally used Ni Schottky contact. It was found that the IrO2 Schottky contact is thermally stable and no distinct change of device performances was observed even after annealing at 450°C for 15 h. This is because the IrO2 suppressed the interdiffusion of the contact metals into the SiC substrate. It is suggested that IrO2 is a promising candidate as gate electrode for high-temperature SiC MESFETs.
Keywords :
Schottky gate field effect transistors; annealing; chemical interdiffusion; electrodes; iridium compounds; silicon compounds; thermal stability; wide band gap semiconductors; 450 degC; IrO2; IrO2 Schottky contact; SiC; SiC substrate; annealing; contact metals interdiffusion; device performances; iridium oxide gate electrode; thermally stable SiC MESFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046723
