35 GHz GaAs power MESFETs and monolithic amplifiers

Author

Kim, Bumman ; Camilleri, Natalino ; Shih, Hung-Dah ; Tserng, Hua Quen ; Wurtele, Marianne

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1327

Lastpage

1333

Abstract

GaAs MESFETs optimized for power operation at 35 GHz are described. Various doping levels and potential barrier layers at the interface between the buffer and the active layers were studied. The best power performance was obtained from an FET on a very heavily doped active layer. A device on an AlGaAs heterobuffer had further improved output power. The best devices delivered output power densities of 0.8 W/mm with 23% efficiency, 0.71 W/mm with 34% efficiency, and 0.61 W/mm with 41% efficiency. Monolithic power amplifiers with a 400-μm FET generated 200 mW of output power. These amplifiers were monolithically power combined, resulting in 600 mW of output power at 34 GHz

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; power amplifiers; power transistors; solid-state microwave devices; 200 mW; 23 to 41 percent; 34 GHz; 35 GHz; 600 mW; AlGaAs heterobuffer; EHF; GaAs-AlGaAs; III-V semiconductors; MESFETs; MM-wave device; heavily doped active layer; microwave power transistor; millimetre wave operation; monolithic amplifiers; potential barrier layers; power combining; power operation; Doping; FETs; Frequency; Gallium arsenide; Laboratories; MESFETs; Millimeter wave technology; Molecular beam epitaxial growth; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32215

Filename

32215