A new GaAs power MESFET structure for improved power capabilities

Author

Fricke, Klaus ; Krozer, Viktor ; Hartnagel, Hans L.

Author_Institution

Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt, West Germany

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1334

Lastpage

1339

Abstract

A GaAs microwave power MESFET structure is described that achieves a significant improvement of the gate mode attenuation by incorporating a suitably terminated transmission line parallel to the gate. The reduced attenuation allows a much wider single gate (a factor of 4 is possible) and a corresponding improvement of the total output power. It is shown that this approach leads to higher gain and cutoff frequency. An additional advantage of this MESFET structure is its higher input resistance relative to a device with equal total gate width but more gates in parallel. This results in simpler matching circuits of greater bandwidth. The single-gate structure can be connected in parallel to further increase the total output power. The results of an electrical characterization of the devices are presented, and its advantages and potential application are discussed

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; GaAs; electrical characterization; gate mode attenuation; input resistance; matching circuits; power MESFET structure; single-gate structure; terminated transmission line; Attenuation; Electrodes; FETs; Frequency; Gallium arsenide; MESFETs; Power generation; Power transmission lines; Thermal conductivity; Thermal resistance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32216

Filename

32216