Computer-aided noise analysis of MESFET and HEMT mixers

Author

Rizzoli, Vittorio ; Mastri, Franco ; Cecchetti, C.

Author_Institution

Dept. of Electron., Inf. & Syst., Bologna Univ., Italy

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1401

Lastpage

1410

Abstract

A numerical approach to the noise analysis of MESFET and HEMT mixers of arbitrary topology is discussed. A qualitative picture of the complex physical mechanisms responsible for the generation of the intermediate frequency (IF) noise is outlined, and the corresponding computational algorithms are presented. The derivation of a noisy nonlinear model for the microwave FET is addressed, and it is shown that a satisfactory solution to this problem can be obtained by combining a conventional time-domain model with standard noise information. The method has been implemented in a computer program designed to work in conjunction with an existing general-purpose harmonic-balance simulator. An application is described in detail to demonstrate the excellent performance of this software tool

Keywords

Schottky gate field effect transistors; circuit analysis computing; electron device noise; equivalent circuits; field effect transistor circuits; high electron mobility transistors; random noise; semiconductor device models; solid-state microwave circuits; HEMT mixers; IF noise; MESFET mixers; arbitrary topology; computational algorithms; computer aided noise analysis; computer program; general-purpose harmonic-balance simulator; intermediate frequency; microwave FET; microwave mixers; noisy nonlinear model; standard noise information; time-domain model; Computational modeling; Computer simulation; Frequency; HEMTs; MESFETs; Microwave FETs; Noise generators; Physics computing; Time domain analysis; Topology;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32224

Filename

32224