DocumentCode :
1175438
Title :
Minimization of intermodulation distortion in GaAs MESFET small-signal amplifiers
Author :
Crosmun, Andrea M. ; Maas, Stephen A.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
Volume :
37
Issue :
9
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
1411
Lastpage :
1417
Abstract :
It is shown how the intermodulation (IM) distortion performance of a small-signal amplifier can be optimized when the amplifier is designed according to available-gain criteria. In this process the MESFET´s output is conjugate-matched and its input is mismatched to obtain a specified gain. This method generally results in a better dynamic range than obtained with other options such as matching the input and mismatching the output or simultaneously matching both the input and output (which, in many cases, is impossible). In available-gain design the value of source impedance that provides the desired gain is not unique and can be selected to optimize IM levels. A numerical formulation of the Volterra series allows a complete equivalent circuit of the FET to be used, and the intermodulation calculations include all feedback effects. The sensitivity of the IM intercept point (IP3 ) to the source-reflection coefficient, Γs, is shown to decrease with increasing frequency and is related to the MESFET´s stability
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric distortion; equivalent circuits; field effect transistor circuits; gallium arsenide; intermodulation; microwave amplifiers; solid-state microwave circuits; FET model; GaAs; III-V semiconductors; IM intercept point sensitivity; IMD; MESFET; Volterra series; available-gain criteria; conjugate matched output; distortion minimisation; equivalent circuit; feedback effects; intermodulation calculations; intermodulation distortion; microwave amplifiers; mismatched input; small-signal amplifiers; source-reflection coefficient; stability; Design optimization; Dynamic range; Equivalent circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Intermodulation distortion; MESFETs; Minimization;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.32225
Filename :
32225
Link To Document :
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