Design concepts for microwave GaAs FET active filters

Author

Sussman-Fort, Stephen E.

Author_Institution

Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1418

Lastpage

1424

Abstract

A comprehensive history of microwave active filter development to date is given. A design methodology is presented for the realization of precision broadband filters in the face of problems such as the nonideal behavior of microwave GaAs FETs and the low Q and related parasitic effects of monolithic-microwave-integrated-circuit (MMIC) inductors and capacitors. The feasibility of this approach is illustrated by the computer-simulated design of a cascadable, second-order microwave bandpass filter

Keywords

III-V semiconductors; MMIC; active filters; band-pass filters; circuit CAD; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave filters; GaAs; III-V semiconductors; MMIC capacitors; MMIC inductors; cascadable filter; computer-simulated design; design methodology; microwave active filter; monolithic-microwave-integrated-circuit; parasitic effects; precision broadband filters; second-order microwave bandpass filter; Active filters; Band pass filters; Design methodology; Gallium arsenide; History; Inductors; MMICs; Microwave FETs; Microwave filters; Microwave theory and techniques;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32226

Filename

32226