DocumentCode :
1175447
Title :
Design concepts for microwave GaAs FET active filters
Author :
Sussman-Fort, Stephen E.
Author_Institution :
Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume :
37
Issue :
9
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
1418
Lastpage :
1424
Abstract :
A comprehensive history of microwave active filter development to date is given. A design methodology is presented for the realization of precision broadband filters in the face of problems such as the nonideal behavior of microwave GaAs FETs and the low Q and related parasitic effects of monolithic-microwave-integrated-circuit (MMIC) inductors and capacitors. The feasibility of this approach is illustrated by the computer-simulated design of a cascadable, second-order microwave bandpass filter
Keywords :
III-V semiconductors; MMIC; active filters; band-pass filters; circuit CAD; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave filters; GaAs; III-V semiconductors; MMIC capacitors; MMIC inductors; cascadable filter; computer-simulated design; design methodology; microwave active filter; monolithic-microwave-integrated-circuit; parasitic effects; precision broadband filters; second-order microwave bandpass filter; Active filters; Band pass filters; Design methodology; Gallium arsenide; History; Inductors; MMICs; Microwave FETs; Microwave filters; Microwave theory and techniques;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.32226
Filename :
32226
Link To Document :
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