Title :
Variation Tolerance in a Multichannel Carbon-Nanotube Transistor for High-Speed Digital Circuits
Author :
Raychowdhury, Arijit ; De, Vivek K. ; Kurtin, Juanita ; Borkar, Shekhar Y. ; Roy, Kaushik ; Keshavarzi, Ali
Author_Institution :
Circuits Res. Lab., Intel Corp., Hillsboro, OR
fDate :
3/1/2009 12:00:00 AM
Abstract :
This paper introduces the theory of a carbon-nanotube multichannel transistor and shows that, due to statistical averaging in such a structure, a lot of variations in growth and processing can be tolerated. A model of such a structure has been presented, and Monte Carlo simulations have been performed to identify which of the imperfections and sources of variation are more critical than others. We use this theoretical framework to study short and multichannel carbon-nanotube FET structures for high-performance VLSI.
Keywords :
Monte Carlo methods; VLSI; carbon nanotubes; digital integrated circuits; field effect transistors; high-speed integrated circuits; nanoelectronics; nanotube devices; C; FET structures; Monte Carlo simulation; high-performance VLSI; high-speed digital circuits; multichannel carbon-nanotube transistor; statistical averaging; Carbon nanotubes; Conducting materials; Digital circuits; Electrostatics; FETs; High K dielectric materials; MOSFETs; Semiconductivity; Semiconductor materials; Silicon; Carbon nanotube transistor; Monte Carlo (MC) simulations; variation tolerance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2010604
