Title :
A 50 GHz GaAs FET MIC transmitter/receiver using hermetic miniature probe transitions
Author :
Ogawa, Koichi ; Ishizaki, Toshio ; Hashimoto, Koji ; Sakakura, Makoto ; Uwano, Tomoki
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
A very compact 50-GHz-band transmitter/receiver for a video link is described. The RF assemblies used in the system consist of 25/50-GHz frequency doublers, a 25-GHz dielectric-resonator oscillator, and a 25-GHz FM modulator. The circuits make extensive use of microwave integrated circuit (MIC) technology with all GaAs FETs as active elements. The frequency doublers exhibit a minimum conversion loss of 2.6 dB and a maximum output power of 11 dBm. The modulator is highly frequency stabilized by the dielectric resonator. Recently developed miniature probe microstrip-to-waveguide transitions permit the MIC assemblies to be installed compactly in hermetically sealed packages. Design considerations and experimental data for the transition are presented. Using these technologies a transmitting power of 10 dBm and a receiver noise figure of 13 dB have been obtained
Keywords :
hybrid integrated circuits; microwave integrated circuits; packaging; radio receivers; radio transmitters; strip line components; 13 dB; 2.6 dB; 50 GHz; DRO; EHF; FET; FM modulator; GaAs; MIC transmitter/receiver; MM-wave operation; RF assemblies; dielectric-resonator oscillator; frequency doublers; hermetically sealed packages; microstrip-to-waveguide transitions; microwave integrated circuit; millimetre wave system; miniature probe transitions; minimum conversion loss; Assembly systems; Dielectrics; Frequency modulation; Gallium arsenide; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Radio frequency; Transmitters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
