Title :
Die-Level 3-D Integration Technology for Rapid Prototyping of High-Performance Multifunctionality Hetero-Integrated Systems
Author :
Kang-Wook Lee ; Ohara, Yuki ; Kiyoyama, K. ; Ji-Cheol Bea ; Murugesan, Mariappan ; Fukushima, Tetsuya ; Tanaka, T. ; Koyanagi, Mitsumasa
Author_Institution :
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
Abstract :
We proposed a die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems. Commercially available 2-D chips with different functions and sizes could be processed and integrated in die level. To realize the die-level 3-D integration, fine-sized backside through silicon via (TSV) and novel detachable technologies are developed. In this paper, we demonstrated a prototype 3-D stacked image sensor system using the die-level 3-D integration technology. Three different functional chips of CMOS image sensor, correlated double sampling, and analog-to-digital converter, which were fabricated by different technologies, were processed to form fine-sized backside Cu TSV of 5- μm diameter and metal microbumps in die level. Each chip was sequentially stacked after evaluating the basic function to form a known-good-die 3-D stacked system. The fundamental characteristics of each functional chip were successfully evaluated in the fabricated prototype 3-D stacked image sensor system.
Keywords :
CMOS image sensors; analogue-digital conversion; rapid prototyping (industrial); three-dimensional integrated circuits; CMOS image sensor; Cu; analog-to-digital converter; correlated double sampling; die-level 3-D integration technology; fine-sized backside Cu TSV; fine-sized backside through silicon via technology; high-performance multifunctionality heterointegrated systems; prototype 3-D stacked image sensor system; rapid prototyping; size 5 mum; Dielectrics; Image sensors; Silicon; Surface treatment; Through-silicon vias; Tin; Backside through silicon via (TSV); die-level 3-D integration; hetero-integrated system;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2280273