Title :
A large-signal HSPICE model for the heterojunction bipolar transistor
Author :
Sharma, Arvind Kumar ; Oki, A.K.
fDate :
9/1/1989 12:00:00 AM
Abstract :
The development of an accurate nonlinear HSPICE model for a 3-×10-μm2 heterojunction bipolar transistor (HBT) is described. The model allows the simulation of nonlinear measurements such as gain at the 1-dB compression point (P1 dB) and third-order intercept point. Experimental data characterizing an HBT at 12.5 GHz are presented, demonstrating the validity of the model for MMIC chip designs
Keywords :
MMIC; S-parameters; circuit CAD; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; 12.5 GHz; CAD; HBT; MMIC chip designs; SHF; heterojunction bipolar transistor; large-signal HSPICE model; microwave devices; nonlinear measurements; simulation; Circuit simulation; Forward contracts; Gallium arsenide; Gold; Heterojunction bipolar transistors; MMICs; Microwave technology; Molecular beam epitaxial growth; Schottky diodes; Thin film transistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
