Output conductance frequency dispersion and low-frequency noise in HEMTs and MESFETs

Author

Reynoso-Hernandez, J.A. ; Graffeuil, J.

Author_Institution

Lab. d´´Autom. & Syst. Anal., Toulouse, France

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1478

Lastpage

1481

Abstract

It is reported that the high level of low-frequency noise observed in MESFETs and HEMTs in the saturation regime usually scales with the device output conductance frequency dispersion (in MESFETs) or with parallel conduction through the GaAlAs (in HEMTs). It does not seem to be directly related to output resistance frequency dispersion. The fundamental cause of output resistance dispersion in HEMTs is still unknown. Thermal feedback effects, low-frequency variations of series resistances, and trap-related effects are possibilities that require investigation

Keywords

Schottky gate field effect transistors; electron device noise; high electron mobility transistors; GaAlAs; HEMTs; MESFETs; low-frequency noise; output conductance frequency dispersion; output resistance dispersion; parallel conduction; saturation regime; series resistances; thermal feedback; trap-related effects; Broadband amplifiers; Frequency measurement; HEMTs; Low-frequency noise; MESFET circuits; MODFETs; Microwave amplifiers; Noise measurement; Optical amplifiers; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32235

Filename

32235