DocumentCode :
117570
Title :
VLSI design of low power SRAM architectures for FPGAs
Author :
Kaushik, Chakka Sri Harsha ; Vanjarlapati, Rajiv Reddy ; Krishna, Varada Murali ; Gautam, Tadvarthi ; Elamaran, V.
Author_Institution :
Dept. of ECE, SASTRA Univ., Thanjavur, India
fYear :
2014
fDate :
6-8 March 2014
Firstpage :
1
Lastpage :
4
Abstract :
SRAM cell, a semi-conductor memory, is majorly used to store/retrieve time independent data. SRAM cells of various configurations with proper understanding of their functioning are mentioned in this study. Typically, an SRAM cell uses six MOSFETS while various architectures for the cells are also available with the number of transistors ranging from 4 to 12 and more. The architectures are different from each other with respect to parameters such as data retention stability, area, power dissipation, feature size. With the size of designs scaling down drastically, the power consumption is tending to be an issue and this study involves difference design architectures of low power SRAM cells. Electronic computer aided design software tools like Digital Schematic editor and the Microwind layout editor are used to obtain the required simulation results.
Keywords :
CMOS logic circuits; CMOS memory circuits; SRAM chips; field programmable gate arrays; integrated circuit design; low-power electronics; FPGA; MOSFET; VLSI design; data retention stability; feature size; integrated circuit area; low power SRAM architecture; power dissipation; semiconductor memory; Computer architecture; Field programmable gate arrays; Layout; SRAM cells; Stability analysis; Transistors; CMOS; FPGA; Microwind; PROM; Pseudo-nMOS; SRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Green Computing Communication and Electrical Engineering (ICGCCEE), 2014 International Conference on
Conference_Location :
Coimbatore
Type :
conf
DOI :
10.1109/ICGCCEE.2014.6922244
Filename :
6922244
Link To Document :
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