Title :
Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier
Author :
Bertuccio, G. ; Pullia, A.
Author_Institution :
Dipartimento di Elettronica e Informazione, Politecnico di Milano, Italy
fDate :
8/1/1994 12:00:00 AM
Abstract :
An X-ray spectrograph operating at room-temperature has been designed and tested. It consists of a small area (1 mm2) silicon diode detector on a high resistivity bulk and an ultra low noise preamplifier of new conception. A resolution of 61 RMS electrons (517 eV FWHM) was measured at 297 K, 34 RMS electrons (288 eV FWHM) at 223 K. The limits and perspectives for room temperature operation of silicon planar diode detectors and related front-end electronics are highlighted
Keywords :
X-ray detection and measurement; X-ray spectroscopy; detector circuits; nuclear electronics; preamplifiers; semiconductor diodes; 223 K; 288 eV; 297 K; 517 eV; RMS electrons; Si diode detector; Si planar diode detectors; X-ray spectrograph; front-end electronics; high resistivity bulk; room temperature X-ray spectroscopy; room temperature operation; ultra low noise preamplifier; Conductivity; Electrons; Envelope detectors; FETs; Preamplifiers; Silicon; Spectroscopy; Temperature; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
