Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

Author

Bertuccio, G. ; Pullia, A.

Author_Institution

Dipartimento di Elettronica e Informazione, Politecnico di Milano, Italy

Volume

41

Issue

4

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1704

Lastpage

1709

Abstract

An X-ray spectrograph operating at room-temperature has been designed and tested. It consists of a small area (1 mm²) silicon diode detector on a high resistivity bulk and an ultra low noise preamplifier of new conception. A resolution of 61 RMS electrons (517 eV FWHM) was measured at 297 K, 34 RMS electrons (288 eV FWHM) at 223 K. The limits and perspectives for room temperature operation of silicon planar diode detectors and related front-end electronics are highlighted

Keywords

X-ray detection and measurement; X-ray spectroscopy; detector circuits; nuclear electronics; preamplifiers; semiconductor diodes; 223 K; 288 eV; 297 K; 517 eV; RMS electrons; Si diode detector; Si planar diode detectors; X-ray spectrograph; front-end electronics; high resistivity bulk; room temperature X-ray spectroscopy; room temperature operation; ultra low noise preamplifier; Conductivity; Electrons; Envelope detectors; FETs; Preamplifiers; Silicon; Spectroscopy; Temperature; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.322776

Filename

322776