Title :
A 60-GHz push-push InGaP HBT VCO with dynamic frequency divider
Author :
Lee, Ockgoo ; Kim, Jeong-Geun ; Lim, Kyutae ; Laskar, Joy ; Hong, Songcheol
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
We present a 60-GHz push-push voltage-controlled oscillator (VCO) with dynamic frequency divider, which is implemented in an InGaP/GaAs heterojunction bipolar transistor technology. A common-base inductive feedback topology is used in the push-push VCO, which generates a pair of 30GHz differential outputs and a single-ended 60GHz push-push output. The 30GHz differential outputs are followed by the proposed dynamic frequency divider. The proposed dynamic frequency divider incorporates active loads with inductive peaking to achieve the higher bandwidth. The maximum operating frequency of the divider was found to be much higher than fT/2 of transistor. To the best of our knowledge, this is the first report demonstrating the extended bandwidth performance of the dynamic frequency divider with active loads and inductive peaking.
Keywords :
III-V semiconductors; bipolar MIMIC; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; voltage-controlled oscillators; 30 GHz; 60 GHz; InGaP-GaAs; dynamic frequency divider; heterojunction bipolar transistor; inductive feedback topology; phase-locked loop; push-push HBT VCO; voltage-controlled oscillator; Costs; Frequency conversion; Frequency synthesizers; Gallium arsenide; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Phase locked loops; Voltage-controlled oscillators; Frequency divider; InGaP/GaAs heterojunction bipolar transistor (HBT); phase-locked loop (PLL); voltage-controlled oscillator (VCO);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.856847