Title :
Analysis of capacitance measurements on silicon microstrip detectors
Author :
Barberis, E. ; Cartiglia, N. ; Dann, J. ; Dubbs, T. ; Noble, K. ; O´Shaughnessy, K. ; Rahn, J. ; Sadrozinski, H.F.-W. ; Wichmann, R. ; Ohsugi, T. ; Unno, Y. ; Miyata, H. ; Tamura, N. ; Yamamoto, K.
Author_Institution :
Inst. for Particle Phys., California Univ., Santa Cruz, CA, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
We present an analysis of the total strip capacitance of double-sided, AC-coupled silicon microstrip detectors. We evaluate the radiation hardness and the noise contribution of different strip geometries. We comment on a serious failure mode
Keywords :
capacitance; capacitance measurement; gamma-ray effects; position sensitive particle detectors; proton effects; semiconductor counters; semiconductor device noise; AC-coupled; Si; Si microstrip detectors; capacitance measurement; double-sided; failure; noise; radiation hardness; total strip capacitance; Capacitance measurement; Detectors; Frequency; Microstrip; Protons; Silicon; Solid modeling; Strips; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
