Title :
Long term reverse annealing in silicon detectors
Author :
Schulz, T. ; Feick, H. ; Fretwurst, E. ; Lindstrom, G. ; Moll, M. ; Mahlmann, K.H.
Author_Institution :
I. Inst. fur Experimentalphys., Hamburg Univ., Germany
fDate :
8/1/1994 12:00:00 AM
Abstract :
The methods of isothermal and isochronal heat treatments have been used for further studies of the reverse annealing effect of the effective impurity concentration. These measurements lead to an improved reliability of a second order model, which was already proposed in earlier works. Using only three parameters this model can predict the time dependence of the effective impurity concentration in a wide range of neutron fluences and temperature
Keywords :
annealing; impurity distribution; neutron effects; semiconductor counters; Si; Si detectors; effective impurity concentration; isochronal heat treatment; isothermal heat treatment; neutron irradiation; reverse annealing; temperature; Annealing; Detectors; Heat treatment; Impurities; Isothermal processes; Neutrons; Predictive models; Silicon; Temperature dependence; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
