Title :
Capacitance modelling for double-sided Si detectors with double-metal readout
Author_Institution :
LEPSI-CRN, Strasbourg, France
fDate :
8/1/1994 12:00:00 AM
Abstract :
A model is presented for calculation of the large contribution to electronic noise coming from the new double-metal readout on double-sided silicon strip detectors. It applies to the two types of N-side insulating schemes: electrode extension or P-barrier. The 3D capacitor structure is described by a grid model, whose sub-elements are all 2D calculated, using analytic formulae, discrete electrostatics and device simulation (PROUDS, TOSCA). The model is tested on existing detectors (SI, HPK, CSEM). All calculations are static
Keywords :
capacitance; electronic engineering computing; semiconductor counters; semiconductor device models; semiconductor device noise; P-barrier; PROUDS; Si; TOSCA; capacitance; double-metal readout; double-sided Si detectors; electrode extension; noise; Analytical models; Capacitance; Capacitors; Detectors; Electrodes; Electrostatic analysis; Insulation; Silicon; Strips; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
