Title :
Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm
Author :
Ouvrard, A. ; Garnache, A. ; Cerutti, L. ; Genty, F. ; Romanini, D.
Author_Institution :
Centre d´Electronique et de Micro-optoelectronique de Montpellier, Montpellier Univ., France
Abstract :
We present a comparison between two kinds of single-frequency Sb-based semiconductor VCSELs operating at 2.3 μm in continuous-wave regime at room temperature. These lasers are studied in view of application to spectroscopy or trace gas detection. Both are based on a molecular beam epitaxy grown half-VCSEL. In the first configuration, a dielectric mirror is deposited on top to form a microcavity, while in the second a concave mirror is used to form an external cavity. The external cavity VCSEL exhibits 5-mW output power, a narrow linewidth (<<20 kHz), and 50-GHz continuous frequency tunability.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser mirrors; laser tuning; microcavity lasers; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; spectral line narrowing; surface emitting lasers; 2.3 mum; 293 to 298 K; 5 muW; 50 GHz; GaInAsSb-GaAlAsSb; GaSb; Sb-based VCSEL; concave mirror; continuous frequency tunability; continuous-wave regime; dielectric mirror; distributed Bragg reflector stack; external cavity VCSEL; laser emission; microcavity; molecular beam epitaxy; narrow linewidth; quantum wells; room temperature; semiconductor VCSEL; single-frequency VCSEL; spectroscopic application; trace gas detection; tunable VCSEL; Dielectrics; Gas lasers; Microcavities; Mirrors; Molecular beam epitaxial growth; Semiconductor lasers; Spectroscopy; Temperature; Tunable circuits and devices; Vertical cavity surface emitting lasers; Infrared spectroscopy; quantum-well lasers; semiconductor lasers; surface-emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.856341
