Experimental demonstration of spatial hole burning reduction leading to 1480-nm pump lasers output power improvement

Author

Guermache, Ali ; Voiriot, Vincent ; Locatelli, Damien ; Legrand, Frédéric ; Capella, Rose-Marie ; Gallion, Philippe ; Jacquet, Joël

Author_Institution

Avanex France, Nozay, France

Volume

17

Issue

10

fYear

2005

Firstpage

2023

Lastpage

2025

Abstract

Observation of spatial hole burning reduction is reported for the first time to our knowledge on flared 1480-nm high-power InGaAsP-InP buried ridge lasers. We determined the longitudinal carrier density profile by spatially resolved spontaneous emission measurements for slightly tapered and straight active waveguides. The tapered stripe shows spatial hole burning reduction leading to 25% output power enhancement.

Keywords

III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; optical hole burning; optical pumping; semiconductor lasers; spontaneous emission; waveguide lasers; 1480 nm; InGaAsP-InP; InGaAsP-InP lasers; buried ridge lasers; high-power laser; laser power improvement; longitudinal carrier density profile; pump laser output; slightly tapered waveguides; spatial hole burning reduction; spatially resolved measurements; spontaneous emission measurements; straight active waveguides; Charge carrier density; Laser excitation; Optical waveguides; Power amplifiers; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Spontaneous emission; Waveguide lasers; Flared waveguide; pump lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.854386

Filename

1512260