1.3-W ripple-free superluminescent diode

Author

Burrow, L. ; Causa, F. ; Sarma, J.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Bath, UK

Volume

17

Issue

10

fYear

2005

Firstpage

2035

Lastpage

2037

Abstract

This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-nm high-power triple quantum-well InGaAs-AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical fibres; optical modulation; quantum well devices; superluminescent diodes; 1 W; 1.3 W; 980 nm; InGaAs-AlGaAs; coupling efficiency; high-power semiconductor material; multimode optical fibers; optical power; ripple-free diode; spectral modulation; stripe diodes; superluminescent diode; tapered diodes; triple quantum-well semiconductor material; wall-plug efficiency; Optical fibers; Optical modulation; Optical pulses; Optical recording; Power generation; Pulse measurements; Pulse modulation; Quantum wells; Semiconductor materials; Superluminescent diodes; Optoelectronic devices; semiconductor device modeling; superluminescent diodes (SLDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.853027

Filename

1512264