Title :
AlGaN/ GaN nanoscale HEMT with Arc shaped gate and stacked HfO2-SiO2 gate dielectric
Author :
Das, Biswajit ; Bhowmick, Bhaskar
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol. Silchar, Silchar, India
Abstract :
This paper presents for the first time Arc shaped gate and arc shaped stacked gate dielectric with cap layer Nanoscale AlGaN/GaN High Electron Mobility Transistor for realization of normally-off HEMT with reduced gate leakage current. An excellent high drain current of 1.182×10-3 A/um at 0.881 threshold voltage along with satisfactory ION/IOFF current ratio of 8.62×107 is obtained.
Keywords :
III-V semiconductors; aluminium compounds; dielectric materials; gallium compounds; hafnium compounds; high electron mobility transistors; leakage currents; silicon compounds; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN nanoscale HEMT; HfO2-SiO2; arc shaped stacked gate dielectric; cap layer; high electron mobility transistor; normally-off HEMT; reduced gate leakage current; Aluminum gallium nitride; Dielectrics; Gallium nitride; HEMTs; Hafnium compounds; Logic gates; Threshold voltage; Absolute Electric Field; AlGaN/GaN HEMT; Arc gate; Drain Current; HfO2; Surface Potential; Threshold Voltage; cap layer;
Conference_Titel :
Green Computing Communication and Electrical Engineering (ICGCCEE), 2014 International Conference on
Conference_Location :
Coimbatore
DOI :
10.1109/ICGCCEE.2014.6922273
