Title :
An efficient design and comparative analysis of low power memory cell structures
Author :
Gavaskar, K. ; Ragupathy, U.S.
Author_Institution :
ECE, Kongu Eng. Collezge, Perundurai, India
Abstract :
With technology scaling, lower power operation has become one of the key areas of importance in VLSI Design. Power reduction in memory circuits with a little compromise on performance is very useful as they form a major part of a digital chip. This paper presents a power analysis model for adiabatic SRAM. The adiabatic SRAM´s and the proposed model power characteristics are simulated, analyzed and compared for various performance frequencies and voltage levels. Simulation results show the power savings that are achieved up to 20% over a frequency range of operation of 10MHz to 200MHz respectively against the static CMOS implementation.
Keywords :
CMOS integrated circuits; SRAM chips; VLSI; low-power electronics; VLSI design; adiabatic SRAM; digital chip; frequency 10 MHz to 200 MHz; low power memory cell structures; memory circuits; power reduction; static CMOS implementation; technology scaling; CMOS integrated circuits; Circuit stability; Microprocessors; Power demand; SRAM cells; Transistors; Energy Recovery; IRS scheme; Memory; Stack effect;
Conference_Titel :
Green Computing Communication and Electrical Engineering (ICGCCEE), 2014 International Conference on
Conference_Location :
Coimbatore
DOI :
10.1109/ICGCCEE.2014.6922280