Title :
Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD
Author :
Pochet, T. ; Ilie, A. ; Foulon, F. ; Equer, B.
Author_Institution :
CEA, Gif-sur-Yvette, France
fDate :
8/1/1994 12:00:00 AM
Abstract :
This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium by PECVD (plasma enhanced chemical vapor deposition) technique. Rates up to ten times (5.5 μm/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared
Keywords :
alpha-particle detection and measurement; semiconductor counters; 5.5 MeV; He enhanced PECVD; Si:H; a-Si:H detectors; alpha particles; depletion voltage; plasma enhanced chemical vapor deposition; residual space charge density; response; Amorphous materials; Chemical vapor deposition; Detectors; Electric variables; Helium; Plasma chemistry; Plasma density; Plasma materials processing; Plasma properties; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
