Title :
Lithium drifted silicon detector fabrication on gettered floating-zone silicon
Author :
Walton, J.T. ; Wong, Y.K. ; Derhacobian, N. ; Haller, E.E.
Author_Institution :
Div. of Eng., California Univ., Berkeley, CA, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
A gettering procedure using phosphorus doped glass is shown to remove lithium-ion precipitation sites from p-type floating-zone (FZ) silicon. A model involving interaction between grown-in vacancies and oxidation-injected silicon interstitials is proposed to explain the gettering procedure. Examples of silicon lithium-drifted detectors fabricated on ungettered and gettered FZ silicon are presented
Keywords :
getters; impurity-vacancy interactions; lithium; semiconductor counters; silicon; zone melting; Si(Li) detectors; Si:Li; gettered floating-zone silicon; interstitials; lithium-ion precipitation sites; p-type; vacancies; vacancy interstitial interaction; Crystals; Detectors; Fabrication; Gettering; Impurities; Laboratories; Lithium; Materials science and technology; Silicon; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
