• DocumentCode
    1176754
  • Title

    Bending characteristics of asymmetric SOI polarization rotators

  • Author

    Deng, Henghua ; Yevick, David O. ; Chaudhuri, Sujeet K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada
  • Volume
    17
  • Issue
    10
  • fYear
    2005
  • Firstpage
    2113
  • Lastpage
    2115
  • Abstract
    We examine polarization conversion and radiation and transition losses in bending slanted-angle silicon-on-insulator polarization rotators.
  • Keywords
    bending; integrated optics; light polarisation; optical losses; optical waveguide theory; silicon-on-insulator; waveguide discontinuities; Si; asymmetric SOI rotators; bending characteristics; polarization conversion; polarization rotators; radiation losses; silicon-on-insulator; transition losses; waveguide structure; Finite element methods; Geometrical optics; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Silicon on insulator technology; Tellurium; Transmission line matrix methods; Beam propagation method; bending analysis; finite-element method (FEM); polarization rotator (PR); silicon-on-insulator (SOI);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2005.856334
  • Filename
    1512290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1176754