DocumentCode
1176788
Title
New results with semiconductor drift chambers for X-ray spectroscopy
Author
Jalas, P. ; Niemelä, A. ; Chen, W. ; Rehak, P. ; Castoldi, A. ; Longoni, A.
Author_Institution
Outokumpu Instrum. OY, Espoo, Finland
Volume
41
Issue
4
fYear
1994
fDate
8/1/1994 12:00:00 AM
Firstpage
1048
Lastpage
1053
Abstract
Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30°C, and as a function of active area. Also the effects influencing the peak to background ratio have been outlined
Keywords
X-ray detection and measurement; X-ray spectroscopy; leakage currents; semiconductor counters; 243 to 273 K; Si; Si drift detectors; X-ray spectroscopy; detector-FET connection; energy resolution; low leakage current; peak to background ratio; temperature; Energy resolution; Leak detection; Leakage current; Manufacturing processes; Silicon; Spectroscopy; Temperature; Testing; X-ray detection; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.322856
Filename
322856
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