Improved RF modeling techniques for enhanced AlGaN/GaN HFETs

Author

Nuttinck, S. ; Gebara, E. ; Laskar, J. ; Shealy, J. ; Harris, M.

Author_Institution

Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

13

Issue

4

fYear

2003

fDate

4/1/2003 12:00:00 AM

Firstpage

140

Lastpage

142

Abstract

Modeling procedures of an AlGaN/GaN HFET that incorporate the effects of both a GaN cap layer and an AlN sub-buffer layer are presented. A single off-state measurement method to extract all eight parasitic elements of an enhanced HFET has been successfully applied. In addition, procedures to model the nonlinear drain-to-source current characteristics featuring a kink are described.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; HFETs; RF modeling techniques; cap layer; high-power microwave applications; kink; nonlinear drain-to-source current characteristics; off-state measurement method; parasitic elements; small-signal modeling; sub-buffer layer; Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; MODFETs; Microwave antenna arrays; Microwave devices; Microwave transistors; Phased arrays; Radio frequency;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.811062

Filename

1193046