Title :
High-frequency noise in AlGaN/GaN HFETs
Author :
Nuttinck, S. ; Gebara, E. ; Laskar, J. ; Harris, M.
Author_Institution :
Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
4/1/2003 12:00:00 AM
Abstract :
We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device high-frequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HFET; MMIC; electronic device; high-frequency noise; temperature dependence; two-temperature noise model; Aluminum gallium nitride; Circuit noise; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Microwave transistors; Noise figure; Noise measurement; Temperature;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.811057
