DocumentCode :
1177528
Title :
A method for generating structurally aligned grids for semiconductor device simulation
Author :
Heitzinger, Clemens ; Sheikholeslami, Alireza ; Park, Jong Mun ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Vienna, Austria
Volume :
24
Issue :
10
fYear :
2005
Firstpage :
1485
Lastpage :
1491
Abstract :
The quality of the numeric approximation of the partial differential equations governing carrier transport in semiconductor devices depends particularly on the grid. The method of choice is to use structurally aligned grids since the regions and directions therein that determine device behavior are usually straightforward to find as they depend on the distribution of doping. Here, the authors present an algorithm for generating structurally aligned grids including anisotropy with resolutions varying over several orders of magnitude. The algorithm is based on a level set approach and permits to define the refined resolutions in a flexible manner as a function of doping. Furthermore, criteria on grid quality can be enforced. In order to show the practicability of this method, the authors study the examples of a trench gate metal-oxide-semiconductor field-effect transistor (TMOSFET) and a radio frequency silicon-on-insulator lateral double diffused metal-oxide-semiconductor (RF SOI LDMOS) power device using the device simulator MINIMOS NT, where simulations are performed on a grid generated by the new algorithm. In order to resolve the interesting regions of the TMOSFET and the RF SOI LDMOS power device accurately, several regions of refinement were defined where the grid was grown with varying resolutions.
Keywords :
MIS devices; MOSFET; carrier mobility; doping profiles; partial differential equations; power semiconductor devices; semiconductor device models; silicon-on-insulator; LDMOS power device; MINIMOS NT device simulator; RF SOI power device; TMOSFET; anisotropy; carrier transport; doping distribution; grid generation; grid quality; grid structural alignment; lateral double diffused metal-oxide-semiconductor power device; level set method; numeric approximation; partial differential equations; semiconductor device simulation; silicon-on-insulator; structurally aligned grids; trench gate metal-oxide-semiconductor FET; Anisotropic magnetoresistance; Double-gate FETs; Level set; Mesh generation; Partial differential equations; Power generation; Radio frequency; Semiconductor device doping; Semiconductor devices; Silicon on insulator technology; Grid generation; level set method; semiconductor device simulation; structurally aligned grids;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2005.852297
Filename :
1512368
Link To Document :
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