Title :
Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laser
Author :
Tadokoro, T. ; Okamoto, H. ; Kohama, Y. ; Kawakami, T. ; Kurokawa, T.
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 mu m is reported. A double heterostructure with a 34-pair GaInAsP ( lambda /sub g/=1.4 mu m)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40- mu m phi device with a 0.88- mu m-thick active layer. Threshold current density is as low as 21 kA/cm/sup 2/ at room temperature.<>
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 0.88 micron; 1.55 micron; 260 mA; DBR laser; GaInAsP-InP; IR; MOCVD; active layer; current density; distributed Bragg reflector; double heterostructure; emission wavelength; laser cavity resonators; laser diode; metalorganic chemical vapor deposition; pulsed operation; reflectivity; room temperature operation; semiconductors; threshold current; vertical-cavity surface-emitting laser; Chemical vapor deposition; Diode lasers; Distributed Bragg reflectors; Indium phosphide; MOCVD; Optical pulses; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
