Gain and threshold characteristics of strain-compensated multiple-quantum-well lasers

Author

Briggs, Alan T R ; Greene, P. David ; Jowett, Julia M.

Author_Institution

BNR Europe Ltd., Essex, UK

Volume

4

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

423

Lastpage

425

Abstract

Strain-compensated multiple-quantum-well (MQW) lasers with an operating wavelength near 1.5 mu m have been grown by low-pressure OMVPE. A simple growth method was used to achieve zero net strain structures having InGaAs wells with 1.1% compressive strain and InGaAsP barriers with compensating tension. Broad stripe laser structures with three, six, and nine wells were characterized and the gain coefficient per well is shown to be related to the logarithm of the current density per well. A threshold current density of 451 A/cm/sup -2/ was obtained for a structure with three wells, uncoated facets, and a cavity length of 2 mm.<>

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 2 mm; IR; InGaAs wells; InGaAsP barriers; MQW; broad stripe laser structures; cavity length; compensating tension; compressive strain; current density; gain coefficient; low-pressure OMVPE; operating wavelength; semiconductor diode laser gain; semiconductor growth; simple growth method; strain-compensated multiple-quantum-well lasers; threshold characteristics; threshold current density; uncoated facets; zero net strain structures; Capacitive sensors; Current measurement; Density measurement; Indium gallium arsenide; Length measurement; Optical waveguides; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.136473

Filename

136473