Title :
Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering
Author :
Andrew, S.R. ; Marsh, J.H. ; Holland, M.C. ; Kean, A.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
5/1/1992 12:00:00 AM
Abstract :
Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the quantum wells have been intermixed by neutral impurity disordering. Threshold currents of devices with integrated 600- mu m passive guides show an increase of less than 10% over normal Fabry-Perot lasers of the same active length, confirming that the propagation loss in the passive wavelength is significantly reduced by disordering to 4.5+or-2 cm/sup -1/. Comparison with unimplanted devices suggests that the implanted dopant also passivates the waveguide electrically.<>
Keywords :
ion implantation; molecular beam epitaxial growth; optical losses; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; MBE growth; active length; diode laser fabrication; double quantum-well lasers; electrical waveguide passivation; implanted dopant; integrated low-loss waveguide; integrated passive waveguide; neutral impurity disordering; passive wavelength; propagation loss; threshold currents; Absorption; Annealing; Impurities; Optical devices; Optical waveguides; Propagation losses; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
