Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering

Author

Andrew, S.R. ; Marsh, J.H. ; Holland, M.C. ; Kean, A.H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

4

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

426

Lastpage

428

Abstract

Double quantum-well lasers have been fabricated with an integrated low-loss waveguide in which the quantum wells have been intermixed by neutral impurity disordering. Threshold currents of devices with integrated 600- mu m passive guides show an increase of less than 10% over normal Fabry-Perot lasers of the same active length, confirming that the propagation loss in the passive wavelength is significantly reduced by disordering to 4.5+or-2 cm/sup -1/. Comparison with unimplanted devices suggests that the implanted dopant also passivates the waveguide electrically.<>

Keywords

ion implantation; molecular beam epitaxial growth; optical losses; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; MBE growth; active length; diode laser fabrication; double quantum-well lasers; electrical waveguide passivation; implanted dopant; integrated low-loss waveguide; integrated passive waveguide; neutral impurity disordering; passive wavelength; propagation loss; threshold currents; Absorption; Annealing; Impurities; Optical devices; Optical waveguides; Propagation losses; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.136474

Filename

136474