DocumentCode :
1178133
Title :
Theory of short-pulse gain saturation in semiconductor laser amplifiers
Author :
Uskov, A. ; Mørk, J. ; Mark, J.
Volume :
4
Issue :
5
fYear :
1992
fDate :
5/1/1992 12:00:00 AM
Firstpage :
443
Lastpage :
446
Abstract :
Carrier heating and spectral hole burning are shown to have a strong influence on the amplification of ultrashort pulses using semiconductor laser amplifiers. Approximate analytical expressions for the effective saturation energy in different pulsewidth regimes are derived.<>
Keywords :
optical communication equipment; optical hole burning; optical saturation; semiconductor junction lasers; spectral line breadth; approximate analytical expressions; carrier heating; diode lasers; effective saturation energy; pulsewidth regimes; semiconductor laser amplifiers; short-pulse gain saturation; spectral hole burning; ultrashort pulses; Fiber lasers; Laser theory; Optical amplifiers; Optical packet switching; Optical pulses; Optimized production technology; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Space vector pulse width modulation;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.136480
Filename :
136480
Link To Document :
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